SRAMs are very important part of today's movable devices like laptops and mobile phones. Different SRAM cells of different number of transistors have their own respective advantages and drawbacks. In this work an attempt has been made to reduce the leakage power by adding some transistors. Each SRAM cell provides an efficient way to reduce the leakage power, but disadvantage of each SRAM cell limit the application of them.
In this paper, the study and transient analysis on four different SRAM cells has been carried out and compared with respect to various parameters like power dissipation, delay and area. The simulation is carried out in 180nm CMOS technology using tanner tools. Layout is carried out using microwind.