Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate

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Author(s)

Viranjay M. Srivastava 1,* Setu P. Singh 1

1. Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan - 173234, India

* Corresponding author.

DOI: https://doi.org/10.5815/ijisa.2012.05.03

Received: 3 Aug. 2011 / Revised: 24 Nov. 2011 / Accepted: 6 Feb. 2012 / Published: 8 May 2012

Index Terms

Tri-gate MOSFET, Radio frequency, HfO_2, High dielectric constant, CMOS, VLSI

Abstract

The scaling of simple gate transistors requires the scaling and transistor elements like source/drain junction became difficult to scale further after a limit due to adverse effect of electrostatic and short-channel performance. The solution of the problem is tri-gate where we can increase the performance without increasing the width and without scaling. In this paper we have described the parameter of tri-gate and taking the high dielectric as substrate.

Cite This Paper

Viranjay M. Srivastava, Setu P. Singh, "Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate", International Journal of Intelligent Systems and Applications(IJISA), vol.4, no.5, pp.16-22, 2012. DOI:10.5815/ijisa.2012.05.03

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