International Journal of Intelligent Systems and Applications (IJISA)
IJISA Vol. 4, No. 5, 8 May 2012
Cover page and Table of Contents: PDF (size: 587KB)
Radiation Damage Effects in Heterostructure Light Emitting Diodes (HLEDs) under Proton Irradiation Fields
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Author(s)
Index Terms
Light Emitting Diodes (LEDs), Optoelectronic devices, Radiation damage, Optical functional device, Radiation efficiency
Abstract
In the present paper, we have been analyzed the high temperature variations testing in order to be used to determine light emitting diode lifetime, even though laser diode failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in a laser diode. Raising the current density however, is not really indicative of lifetime since it is more likely a situation to be avoided than one that simulates normal lifetime degradation. The reliability of semiconductor sources is very dependent on the degradation modes. This paper has investigated some of the degradation modes and capabilities of typical LEDs currently used in many communication and sensing systems over wide range of the affecting parameters. LED’s are typically used in multimode transmission systems where data rates no larger than 50 Mbit/sec are required. They have larger spectral widths and can add to the problem of dispersion in communications systems. Laser diodes are used in systems that require coherent and often single mode light such as high data rate communications and sensing applications.
Cite This Paper
Ahmed Nabih Zaki Rashed, "Radiation Damage Effects in Heterostructure Light Emitting Diodes (HLEDs) under Proton Irradiation Fields", International Journal of Intelligent Systems and Applications(IJISA), vol.4, no.5, pp.45-55, 2012. DOI:10.5815/ijisa.2012.05.07
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