Mohammad Hossein Moaiyeri

Work place: Department of Electrical and Computer Engineering, Shahid Beheshti University, Tehran, Iran

E-mail: h_moaiyeri@sbu.ac.ir

Website:

Research Interests: Computational Engineering, Engineering

Biography

Mohammad Hossein Moaiyeri received his Ph.D. in computer architecture from Shahid Beheshti University, Tehran, Iran in 2012. He is currently an Assistant Professor in Faculty of Electrical and Computer Engineering of Shahid Beheshti University. His research interests mainly focus on nanoelectronics circuitry specially based on CNFET, QCA and SET, Low-power VLSI design, VLSI implementation of MVL and fuzzy logic and Mixed-mode circuits.

Author Articles
An Energy-Efficient and Robust Voltage Level Converter for Nanoelectronics

By Behzad Alidoosti Mohammad Hossein Moaiyeri

DOI: https://doi.org/10.5815/ijmecs.2015.05.01, Pub. Date: 8 May 2015

Low-power design has recently become very important especially in nanoelectronic VLSI circuits and systems. Functioning of circuits at ultra-low voltages leads to lower power consumption per operation. An efficient method is to separate the logic blocks based on their performance requirement and applying a specific supply voltage for each block. In order to prevent an enormous static current in these multi-VDD circuits, voltage level converters are essential. This study presents an energy-efficient and robust single-supply level converter (SSLC) based on multi-threshold carbon nanotube FETs (CNTFETs). Unique characteristics of the CNTFET device and transistor stacking are utilized suitably to reduce the power and energy consumption of the proposed LC. The results of the extensive simulations, conducted using 32nm CNTFET technology of Stanford University indicate the superiority of the proposed design in terms energy-efficiency and robustness to process, voltage and temperature variations, as compared to the other conventional and state-of-the-art LC circuits, previously presented in the literature. The results demonstrate almost on average 35%, 55%, 90% and 68% improvements in terms of delay, total power, static power and energy consumption, respectively.

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A Novel Quaternary Full Adder Cell Based on Nanotechnology

By Fazel Sharifi Mohammad Hossein Moaiyeri Keivan Navi

DOI: https://doi.org/10.5815/ijmecs.2015.03.03, Pub. Date: 8 Mar. 2015

Binary logic circuits are limited by the requirement of interconnections. A feasible solution is to transmit more information over a signal line and utilizing multiple-valued logic (MVL). This paper presents a novel high performance quaternary full adder cell based on carbon nanotube field effect transistor (CNTFET). The proposed Quaternary full adder is designed in multiple valued voltage mode. CNTFET is a promising candidate for replacing MOSFET with some useful properties, such as the capability of having the desired threshold voltage by regulating the diameters of the nanotubes, which make them very appropriate for voltage mode multiple threshold circuits design. The proposed circuit is examined, using Synopsys HSPICE with the standard 32 nm CNTFET technology with different temperatures and supply voltages.

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