International Journal of Wireless and Microwave Technologies (IJWMT)
IJWMT Vol. 4, No. 5, 26 Nov. 2014
Cover page and Table of Contents: PDF (size: 530KB)
RF CMOS Low Noise Amplifier Design-A Case Study
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Author(s)
R.K.Lamba
1,*
C.H.Vithalani
2
Index Terms
LNA, Bluetooth, Source Degeneration
Abstract
A design methodology of Differential Design of CMOS low noise amplifier (LNA) with source degeneration for Bluetooth frequency is presented. The results show that the proposed topology is effective and can be used to achieve the minimum noise figure at all frequencies of interest. This LNA was realized in 0.18μm CMOS technology using Microwave Office Tool from AWR Inc. The measured noise figure is 2.066 dB and the gain is 20.29 dB.
Cite This Paper
R.K.Lamba, C.H.Vithalani,"RF CMOS Low Noise Amplifier Design-A Case Study", IJWMT, vol.4, no.5, pp.14-24, 2014. DOI: 10.5815/ijwmt.2014.05.02
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